IGCT 요약정보 및 구매

Integrated Gate-Commutated Thyristors

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Product Information

상품 기본설명

Integrated Gate-Commutated Thyristors

상품 상세설명

▪ Special feature

- Patented free-floating silicon technology 

- Optical trigger input and status feedback 

- Patented low-inductance housing technology 

- Fast response and precise timing 

- AC square wave or DC supply input Cosmic radiation resistance rating  



▪ Detail

All ABB IGCTs (Integrated Gate-Commutated Thyristors) are press-pack devices. They are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the power terminals.

The IGCT's turn-on/off control unit is an integral element of the component. It only requires an external power supply and its control functions are conveniently accessed through optical fiber connections. The device's control power consumption typically ranges from 10 - 100 W.

The IGCT is optimized for low conduction losses. Its typical turn-on/off switching frequency is in the range of 500 hertz. However, in contrast to the GTO, the upper switching frequency is only limited by operating thermal losses and the system's ability to remove this heat. This feature, in conjunction with the device's fast transition between on and off state, enables short on-off pulse bursts with switching frequencies of up to 40 kHz.

IGCTs require a turn-on protective network (in essence an inductor) to limit the rate of current rise. However, in contrast to the GTO, the turn-off protection network is optional. It can be omitted at the price of a somewhat reduced turn-off current capability

Click on the blue part number to download and print in PDF file format.

For more information, please contact the Q&A bulletin board and we will kindly guide you.

1) Asymmetric IGCT

Asymmetric IGCT devices are single devices optimized for snubberless turn-off operation. The associated recovery diodes can be chosen from our fast recovery diodes product range.

Part number VDRM (V) VDC (V) ITGQM (A) ITAVM (A) Package* (mm)
5SHY 35L4520 4500 2800 4000 1700 85/26
5SHY 35L4521 4500 2800 4000 1700 85/26
5SHY 35L4522 4500 2800 4000 2100 85/26
5SHY 40L4511 4500 2800 3600 1430 85/26
5SHY 55L4500 4500 2800 5000 1870 85/26
5SHY 50L5500 5500 3300 3600 1290 85/26
5SHY 42L6500 6500 4000 3800 1290 85/26

*Note: Pole-piece diameter / Housing height 

2) Reverse conducting IGCT

Reverse Conducting IGCTs are monolithical integrated freewheeling diodes. They are optimized for snubberless turn-off conditions.

Part number VDRM (V) VDC (V) ITGQM (A) ITAVM / IFAVM (A) Package* (mm)
5SHX 08F4510 4500 2800 630 250 47/26
Diode part 130
5SHX 14H4510 4500 2800 1100 420 63/26
Diode part 390
5SHX 26L4520 4500 2800 2200 1010 85/26
Diode part 390
5SHX 06F6010 5500 3300 520 210 47/26
Diode part 110
5SHX 10H6010 5500 3300 900 350 63/26
Diode part 170
5SHX 19L6020 5500 3300 1800 840 85/26
Diode part 340

*Note: Pole-piece diameter / Housing height 


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